Monte Carlo simulations of focused ion beam induced processing
R. Timilsina
Although several efforts are being devoted to understand the
ion/electron-solid interactions and focused ion beam induced processing in the
past several decades, the recent development of Gas Field Ion Source (GFIS) has
garnered much attention in these days because of its wide range of applications
in nanoscale synthesis, nanoscale imaging, lithography and nanofabrication. Timilsina
et al have developed a simulator, called “EnvisION”, which has features of
simulating elemental and compound targets by using both light and heavy ions
with various beam profiles. The simulator can simulate electron/ion beams at
different energies and provides the three dimensional nanostructures of
deposited pillars, etched via and sputtered vias. In addition, the simulator
calculates the nuclear and electronic energy loss profile, ion implant concentrations,
resolution limiting effects etc. The peer-reviewed articles based on the
EnvisION simulator and related to the simulator are listed below.
References
[1] R. Timilsina, D. A. Smith and P. D. Rack, “A comparison
of neon versus helium ion beam induced deposition via Monte Carlo simulations”,
Nanotechnology 24, 115302 (2013)
[2] R. Timilsina and P. D. Rack, “Monte Carlo Simulations of
nanoscale focused neon ion beam sputtering”, Nanotechnology 24, 495303 (2013)
[3] R. Timilsina, S. Tan, R. Livengood and P. D. Rack,
“Monte Carlo simulations of nanoscale focused neon ion beam sputtering of
copper: elucidating resolution limits and sub-surface damage”, Nanotechnology
25, 485704 (2014)
[4] C. Gonzalez, R. Timilsina, G. Li, G. Duscher, P. D.
Rack, W. Slingenbergh, W. F. van Dorp, J. T. M. De Hosson, K. L. Klein, H. M.
Wu and L. A. Stern “Focused helium and neon ion beam induced etching for
advanced extreme ultraviolet lithography mask repair”, J. Vac. Sci. Technol. B
32, 021602 (2014)
[5] H. M. Wu, L. A. Stern, J. H. Chen, M. Huth, C. H.
Schwalb, M. Winhold, F. Porrati, C. M. Gonzalez, R. Timilsina and P. D. Rack, “Synthesis
of nanowires via helium and neon focused ion beam induced deposition with the
gas field ion microscope”, Nanotechnology 24, 175302 (2013)
[6] G. Arnold, R. Timilsina, J. Fowlkes, A. Orthacker, G.
Kothleitner, P. D. Rack and H. Plank, “Fundamental Resolution Limits During
Electron-Induced Direct-Write Synthesis”, ACS Applied material &
interfaces, 6, 7380 (2014)
[7] J. H. Noh, J. D. Fowlkes, R. Timilsina, M. G. Stanford,
B. B. Lewis and P. D. Rack, “Pulse Laser-Assisted focused electron-beam-induced
etching of titanium with XeF2: Enhanced reaction rate and precursor transport”,
ACS applied material & interfaces, 7, 4179 (2015)
[8] H. Guo, S. Dong, P. D. Rack, J. D. Budai, C. Beekman, Z.
Gai, W. Siemons, C. M. Gonzalez, R. Timilsina, A. T. Wong, A. Herklotz, P. C.
Snijders, E. Dagotto and T. Z. Ward, “Strain Doping: Reversible Single-Axis
Control of a Complex Oxide Lattice via Helium Implantation”
[9] C. M. Gonzalez, W. Slingenbergh, R. Timilsina, J. H.
Noh, M. G. Standford, B. B. Lewis, K. K. Klein, T. Liang, J. D. Fowlkes and P.
D. Rack, “Evaluation of mask repair strategies via focused electron, helium,
and neon beam induced processing for EUV applications ”, SPIE Proceeding,
Extreme Ultraviolet (EUV) Lithography, 9048, 90480M (2014)
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