Wednesday, September 24, 2014

Monte Carlo Simulations of focused electron and ion beam induced processing


Monte Carlo simulations of focused ion beam induced processing

 R. Timilsina

Although several efforts are being devoted to understand the ion/electron-solid interactions and focused ion beam induced processing in the past several decades, the recent development of Gas Field Ion Source (GFIS) has garnered much attention in these days because of its wide range of applications in nanoscale synthesis, nanoscale imaging, lithography and nanofabrication. Timilsina et al have developed a simulator, called “EnvisION”, which has features of simulating elemental and compound targets by using both light and heavy ions with various beam profiles. The simulator can simulate electron/ion beams at different energies and provides the three dimensional nanostructures of deposited pillars, etched via and sputtered vias. In addition, the simulator calculates the nuclear and electronic energy loss profile, ion implant concentrations, resolution limiting effects etc. The peer-reviewed articles based on the EnvisION simulator and related to the simulator are listed below.

References

[1] R. Timilsina, D. A. Smith and P. D. Rack, “A comparison of neon versus helium ion beam induced deposition via Monte Carlo simulations”, Nanotechnology 24, 115302 (2013)
[2] R. Timilsina and P. D. Rack, “Monte Carlo Simulations of nanoscale focused neon ion beam sputtering”, Nanotechnology 24, 495303 (2013)
[3] R. Timilsina, S. Tan, R. Livengood and P. D. Rack, “Monte Carlo simulations of nanoscale focused neon ion beam sputtering of copper: elucidating resolution limits and sub-surface damage”, Nanotechnology 25, 485704 (2014)
[4] C. Gonzalez, R. Timilsina, G. Li, G. Duscher, P. D. Rack, W. Slingenbergh, W. F. van Dorp, J. T. M. De Hosson, K. L. Klein, H. M. Wu and L. A. Stern “Focused helium and neon ion beam induced etching for advanced extreme ultraviolet lithography mask repair”, J. Vac. Sci. Technol. B 32, 021602 (2014)
[5] H. M. Wu, L. A. Stern, J. H. Chen, M. Huth, C. H. Schwalb, M. Winhold, F. Porrati, C. M. Gonzalez, R. Timilsina and P. D. Rack, “Synthesis of nanowires via helium and neon focused ion beam induced deposition with the gas field ion microscope”, Nanotechnology 24, 175302 (2013)
[6] G. Arnold, R. Timilsina, J. Fowlkes, A. Orthacker, G. Kothleitner, P. D. Rack and H. Plank, “Fundamental Resolution Limits During Electron-Induced Direct-Write Synthesis”, ACS Applied material & interfaces, 6, 7380 (2014)
[7] J. H. Noh, J. D. Fowlkes, R. Timilsina, M. G. Stanford, B. B. Lewis and P. D. Rack, “Pulse Laser-Assisted focused electron-beam-induced etching of titanium with XeF2: Enhanced reaction rate and precursor transport”, ACS applied material & interfaces, 7, 4179 (2015)
[8] H. Guo, S. Dong, P. D. Rack, J. D. Budai, C. Beekman, Z. Gai, W. Siemons, C. M. Gonzalez, R. Timilsina, A. T. Wong, A. Herklotz, P. C. Snijders, E. Dagotto and T. Z. Ward, “Strain Doping: Reversible Single-Axis Control of a Complex Oxide Lattice via Helium Implantation”
[9] C. M. Gonzalez, W. Slingenbergh, R. Timilsina, J. H. Noh, M. G. Standford, B. B. Lewis, K. K. Klein, T. Liang, J. D. Fowlkes and P. D. Rack, “Evaluation of mask repair strategies via focused electron, helium, and neon beam induced processing for EUV applications ”, SPIE Proceeding, Extreme Ultraviolet (EUV) Lithography, 9048, 90480M (2014)

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